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Toshiba Semiconductor - Field Effect Transistor Silicon N Channel MOS Type

Numéro de référence TPC8020-H
Description Field Effect Transistor Silicon N Channel MOS Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TPC8020-H fiche technique
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TPC8020-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
TPC8020-H
High-Speed and High-Efficiency DC-DC Converter
Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
High-speed switching
Small gate charge: Qg = 23 nC (typ.)
Low drain-source ON resistance: RDS (ON) = 6.8 mO (typ.)
High forward transfer admittance: |Yfs| =32 S (typ.)
Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
Enhancement mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
ID P
PD
PD
EA S
IAR
EAR
Tc h
Tstg
30
30
±20
13
52
1.9
1.0
110
13
0.084
150
55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
JEDEC
?
JEITA
?
TOSHIBA
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8765
1234
1 2004-07-06

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