KHB9D0N50F1 Datasheet PDF - KEC semiconductor
| Part Number | KHB9D0N50F1 | |
| Description | (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs | |
| Manufacturers | KEC semiconductor | |
| Logo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 500V, ID= 9A
Drain-Source ON Resistance :
RDS(ON)=0.8 @VGS =10V
Qg(typ.) =34.6nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB9D0N50P1 KHB9D0N50F1
Drain-Source Voltage
VDSS 500 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above25
ID
IDP
EAS
EAR
dv/dt
PD
9 9*
5.4 5.4*
36 36*
360
13.5
4.5
135 44
1.07 0.35
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.93
2.86 /W
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthCS
RthJA
0.5
62.5
- /W
62.5 /W
* : Drain current limited by maximum junction temperature.
KHB9D0N50P1/F1
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
F
B
G
C
O
JQ
H
N 123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
D
G
2005. 10. 24
Revision No : 0
S
1/7
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KHB9D0N50P1/F1
100
Duty=0.5
Rth
{KHB9D0N50P1}
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100
101
Square Wave Pulse Duration (sec)
Rth
{KHB9D0N50F1}
100 Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
Single Pulse
10-5 10-4
10-3
10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100
101
Square Wave Pulse Duration (sec)
2006. 1. 17
Revision No : 0
5/7
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KHB9D0N50F1 electronic component. |
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