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PDF KHB6D0N40P Data sheet ( Hoja de datos )
| Número de pieza | KHB6D0N40P | |
| Descripción | (KHB6D0N40F / KHB6D0N40P) High Voltage MOSFETs | |
| Fabricantes | KEC semiconductor | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KHB6D0N40P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS=400V, ID=6.0A
Drain-Source ON Resistance :
RDS(ON)=1.0 @VGS=10V
Qg(typ.)=32nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB6D0N40P KHB6D0N40F
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
6.0 6.0*
3.6 3.6*
24 24*
450
9.2
4.5
73 38
0.74 0.3
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.71
Thermal Resistance, Case-to-Sink
RthCS
0.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
3.31 /W
- /W
62.5 /W
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
A
E
P
K
L
D
MM
F
B
G
C
O
JQ
H
N 123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
D
2005. 12. 15
Revision No : 2
G
S
1/7
1 page  
www.DataSheet4U.com
KHB6D0N40P/F
Duty=0.5
100
0.2
0.1
10-1
0.05
0.02
0.01
10-2
10-5
10-4
Rth
{KHB6D0N40P}
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100
101
Square Wave Pulse Duration (sec)
Rth
{KHB6D0N40F}
Duly=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
Single Pulse
10-2
10-5
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100
101
Square Wave Pulse Duration (sec)
2005. 12. 15
Revision No : 2
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KHB6D0N40P.PDF ] | |
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