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PDF PG03DBTFC Data sheet ( Hoja de datos )
| Número de pieza | PG03DBTFC | |
| Descripción | TVS Diode | |
| Fabricantes | KEC semiconductor | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
PG03DBTFC
TVS Diode for ESD
Protection in Portable Electronics
FEATURES
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 5A(tp=8/20 s)
Bidirectional Type Pin Configuration Structure.
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects one I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA’s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
CATHODE MARK
21
B
DIM MILLIMETERS
A A 1.00+_ 0.05
B 0.80+0.10/-0.05
C 0.60+_ 0.05
D 0.30+_ 0.05
E 0.40 MAX
F 0.13+_ 0.05
1. ANODE
2. CATHODE
TFSC
Marking
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
Junction Temperature
Storage Temperature
PPK
Tj
Tstg
RATING
50
-55 150
-55 150
UNIT
W
21
21
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Junction Capacitance
CJ
TEST CONDITION
-
It=1mA
VRWM=3.3V
VR=0V, f=1MHz
MIN.
-
4.2
-
-
TYP.
-
-
-
-
MAX.
3.3
6.2
20
25
UNIT
V
V
A
pF
2005. 6. 8
Revision No : 0
1/1
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