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Número de pieza | AF4920N | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Anachip | |
Logotipo | ||
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N-Channel Enhancement Mode Power MOSFET
AF4920N
Features
- Low On-resistance
- Simple Drive Requirement
- Dual N MOSFET Package
General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Product Summary
BVDSS (V)
30
RDS(ON) (mΩ)
18
ID (A)
8.2
Pin Assignments
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Pin Descriptions
Pin Name
S1/2
G1/2
D1/2
Description
Channel 1/2 Source
Channel 1/2 Gate
Channel 1/2 Drain
Ordering information
A X 4920N X X X
Feature
F :MOSFET
PN
Package
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Oct 13, 2005
1/5
1 page N-Channel Enhancement Mode Power MOSFET
AF4920N
Marking Information
SO-8
( Top View )
8
Logo
Part Number
4920N
AA Y W X
1
Package Information
Package Type: SO-8
D
Lot code:
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Week code:
"A~Z": 01~26;
"A~Z": 27~52
Year code:
"4" =2004
Factory code
8765
1
234
eB
L
DETAIL A
θ
Anachip Corp.
www.anachip.com.tw
DETAIL A
1. All Dimensions Are in Millimeters.
2. Dimension Does Not Include Mold Protrusions.
Symbol
A
A1
B
C
D
E
E1
L
θ
e
Dimensions In Millimeters
Min.
Nom.
Max.
1.35
1.55
1.75
0.10
0.18
0.25
0.33
0.41
0.51
0.19
0.22
0.25
4.80
4.90
5.00
5.80
6.15
6.50
3.80
3.90
4.00
0.38
0.71
1.27
0o 4o 8o
1.27 TYP.
Rev. 1.0 Oct 13, 2005
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AF4920N.PDF ] |
Número de pieza | Descripción | Fabricantes |
AF4920N | N-Channel Enhancement Mode Power MOSFET | Anachip |
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