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What is 2PD2150?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "NPN low VCEsat transistor".


2PD2150 Datasheet PDF - NXP Semiconductors

Part Number 2PD2150
Description NPN low VCEsat transistor
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 01 — 22 April 2005
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
TO-243) SMD plastic package.
PNP complement: 2PB1424.
1.2 Features
s Low collector-emitter saturation voltage VCEsat
s High collector current capability: IC and ICM
s High collector current gain (hFE) at high IC
s High efficiency due to less heat generation
s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s DC-to-DC conversion
s MOSFET gate driving
s Motor control
s Charging circuits
s Power switches (e.g. motors, fans)
s Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
ICM
hFE
Quick reference data
Parameter
collector-emitter voltage
peak collector current
DC current gain
Conditions
open base
single pulse;
tp 1 ms
VCE = 2 V;
IC = 0.1 A
Min Typ Max Unit
- - 20 V
- - 3A
180 -
390

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2PD2150 equivalent
Philips Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off
current
emitter-base cut-off
current
VCB = 30 V; IE = 0 A
VCB = 30 V; IE = 0 A;
Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 2 V; IC = 0.1 A
IC = 2 A; IB = 100 mA
VBEon
fT
base-emitter turn-on
voltage
transition frequency
VCE = 10 V; IC = 5 mA
VCE = 1 V; IC = 1 A
IC = 500 mA; VCE = 2 V;
f = 100 MHz
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Min Typ Max Unit
- - 0.1 µA
- - 10 µA
- - 0.1 µA
180 -
--
390
0.5 V
[1] - - 0.7 V
[1] - - 1 V
- 220 -
MHz
- 20 -
pF
9397 750 14987
Product data sheet
Rev. 01 — 22 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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Featured Datasheets

Part NumberDescriptionMFRS
2PD2150The function is NPN low VCEsat transistor. NXP SemiconductorsNXP Semiconductors

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