PDF MW6IC2015GNBR1 Data sheet ( Hoja de datos )

Número de pieza	MW6IC2015GNBR1
Descripción	RF LDMOS Wideband Integrated Power Amplifiers
Fabricantes	Freescale Semiconductor
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No Preview Available ! www.DataSheet4U.com Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on - chip design makes it usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W - CDMA and TD - SCDMA. Final Application • Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 1197300m- A19, 9P0ouMt =Hz1)5 Watts PEP, Full Frequency Band (1805 - 1880 MHz or Power Gain — 26 dB Power Added Efficiency — 28% IMD — - 30 dBc Driver Application • T1197yp30i0cma- A1l 9G, 9PS0oMuMt E=HDz3)GWEaPttesrAfovrgm.,aFncuell:FVreDqDu=en2c6yVBoaltnsd, I(D1Q810=5 -1138080mAM,HIDzQo2r = Power Gain — 27 dB Power Added Efficiency — 19% Spectral Regrowth @ 400 kHz Offset = - 69 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 0.8% rms • Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW Pout. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VDS1 RFin VGS1 VGS2 Quiescent Current Temperature Compensation RFout/VDS2 Figure 1. Functional Block Diagram Document Number: MW6IC2015N Rev. 2, 2/2007 MW6IC2015NBR1 MW6IC2015GNBR1 1805 - 1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW6IC2015NBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW6IC2015GNBR1 GND 1 VDS1 NC 2 3 NC 4 NC 5 16 GND 15 NC RFin NC VGS1 VGS2 NC GND 6 7 8 9 10 11 14 RFout / VDS2 13 NC 12 GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MW6IC2015NBR1 MW6IC2015GNBR1 1 1 page VDD1 MW6IC2015, Rev. 0 C2 C3 VDD2 C14 R1 VGG1 C15 R2 VGG2 C1 C6 C9 C7 C11 C8 C10 C12 C13 C4 C5 Figure 4. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1930 - 1990 MHz RF Device Data Freescale Semiconductor MW6IC2015NBR1 MW6IC2015GNBR1 5 5 Page VDD2 VDD1 RF INPUT Z1 Z2 C6 C1 Z3 1 2 3 NC 4 NC 5 NC 6 7 NC DUT 16 NC 15 C2 Z9 C3 14 Z4 C7 C9 Z5 Z6 Z7 RF OUTPUT Z8 C11 C8 C10 C16 C12 C13 VGG1 VGG2 R1 C14 R2 8 Quiescent Current 9 Temperature Compensation 10 NC NC 13 11 12 Z10 C4 C5 C15 Z1* 1.64″ x 0.08″ Microstrip Z2 0.54″ x 0.08″ Microstrip Z3 0.15″ x 0.04″ Microstrip Z4 0.13″ x 0.35″ Microstrip Z5 0.10″ x 0.35″ Microstrip Z6* 0.26″ x 0.04″ Microstrip Z7* Z8 Z9, Z10 PCB 0.41″ x 0.04″ Microstrip 1.18″ x 0.04″ Microstrip 1.18″ x 0.08″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning. Figure 21. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — 1805 - 1880 MHz Table 7. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — 1805 - 1880 MHz Part Description Part Number Manufacturer C1, C14, C15 2.2 μF Chip Capacitors C3225X5R1H225MT TDK C2, C4, C11 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C3, C5 10 μF Chip Capacitors C5750X5R1H106MT TDK C6 1.5 pF Chip Capacitor ATC100A1R5BT500XT ATC C7, C8 2.7 pF Chip Capacitors ATC100B2R7BT500XT ATC C9, C10, C12 0.8 pF Chip Capacitors ATC100B0R8BT500XT ATC C13 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC C16 1 pF Chip Capacitor ATC100B1R0BT500XT ATC R1 10 kΩ, 1/4 W Chip Resistor CRCW12061001FKTA Vishay R2 18 Ω, 1/4 W Chip Resistor CRCW120618R0FKTA Vishay RF Device Data Freescale Semiconductor MW6IC2015NBR1 MW6IC2015GNBR1 11 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
MW6IC2015GNBR1	RF LDMOS Wideband Integrated Power Amplifiers	Freescale Semiconductor

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