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STB70NF3LL Datasheet دیتاشیت PDF دانلود

دیتاشیت - ST Microelectronics - N-channel Power MOSFET

شماره قطعه STB70NF3LL
شرح مفصل N-channel Power MOSFET
تولید کننده ST Microelectronics 
آرم ST Microelectronics 


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STB70NF3LL شرح
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® STB70NF3LL
N-CHANNEL 30V - 0.008 - 70A D2PAK
LOW GATE CHARGE STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB70NF3LL
30 V < 0.01 70 A
s TYPICAL RDS(on) = 0.01 @ 4.5V
s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
PRELIMINARY DATA
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
3
1
D2PAK
TO-263
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND
OPTIMISED FOR HIGH EFFICIENCY CPU
CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ()
Ptot
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
May 2000
Va l u e
30
30
± 15
70
50
280
100
0.67
-65 to 175
175
Un it
V
V
V
A
A
A
W
W /o C
oC
oC
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دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
STB70NF3LL N-channel Power MOSFET ST Microelectronics
ST Microelectronics

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