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PDF STP120NF04 Data sheet ( Hoja de datos )
| Número de pieza | STP120NF04 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP120NF04
N-channel 40V - 0.0047Ω - 120A TO-220
STripFET™ II MOSFET
General features
Type
VDSS
STP120NF04 40V
RDS(on)
<0.0050Ω
ID
120A
Pw
300W
■ Standard threshold drive
■ 100% avalanche tested
Description
This MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
■ Switching application
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STP120NF04
October 2006
Marking
P120NF04
Package
TO-220
Rev 2
Packaging
Tube
1/14
www.st.com
14
1 page  
STP120NF04
Electrical characteristics
Table 5. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=120A, VGS=0
ISD=120A,
di/dt = 100A/µs,
VDD=20V, Tj=150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
120 A
480 A
1.3 V
75 ns
185 nC
5A
5/14
5 Page 
STP120NF04
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/14
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| PDF Descargar | [ Datasheet STP120NF04.PDF ] | |
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