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PDF MBR20H100CT Data sheet ( Hoja de datos )
| Número de pieza | MBR20H100CT | |
| Descripción | SWITCHMODE Power Rectifier | |
| Fabricantes | ON Semiconductor | |
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MBR20H100CT,
MBRB20H100CT,
MBRF20H100CT
SWITCHMODE™
Power Rectifier
100 V, 20 A
Features and Benefits
• Low Forward Voltage: 0.64 V @ 125°C
• Low Power Loss/High Efficiency
• High Surge Capacity
• 175°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Guard−Ring for Stress Protection
• Pb−Free Packages are Available
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight (Approximately):
1.9 Grams (TO−220)
1.7 Grams (D2PAK)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Please See the Table on the Following Page
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2, 4
3
4 MARKING
DIAGRAMS
1 23
TO−220AB
CASE 221A
STYLE 6
AYWW
B20H100G
AKA
1 23
12
3
ISOLATED TO−220
CASE 221D
STYLE 3
AYWW
B20H100G
AKA
4 D2PAK
CASE 418B
STYLE 3
AY WW
B20H100G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B20H100 = Device Code
G = Pb−Free Device
AKA
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MBR20H100CT/D
1 page  
MBR20H100CT, MBRB20H100CT, MBRF20H100CT
10
D = 0.5
1 0.2
0.1
0.1 0.05
0.01
P(pk)
0.01
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10 100 1000
t1, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT
MERCURY
SWITCH
S1
+VDD
IL 10 mH COIL
ID
DUT
VD
IL
t0
BVDUT
ID
VDD
t1 t2 t
Figure 11. Test Circuit
The unclamped inductive switching circuit shown in
Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
Figure 12. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
EQUATION (1):
ǒ ǓWAVAL [
1
2
LI
2
LPK
BVDUT
BVDUT–VDD
EQUATION (2):
WAVAL
[
1
2
LI
2
LPK
http://onsemi.com
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| PDF Descargar | [ Datasheet MBR20H100CT.PDF ] | |
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