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PDF MW6S004NT1 Data sheet ( Hoja de datos )
| Número de pieza | MW6S004NT1 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Freescale Semiconductor | |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
•
Typical Two - Tone Performance
PoPuto=w4erWGaatitns
PEP
— 18
dB
@
1960
MHz,
28
Volts,
IDQ
=
50
mA,
Drain Efficiency — 33%
IMD — - 34 dBc
•
Typical Two - Tone Performance
Pout = 4 Watts PEP
@
900
MHz,
28
Volts,
IDQ
=
50
mA,
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — - 39 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MW6S004N
Rev. 2, 2/2007
MW6S004NT1
1 - 2000 MHz, 4 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD 1.5
PLASTIC
Table 1. Maximum Ratings
www.DataSheet4U.com
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
- 0.5, +68
- 0.5, +12
- 65 to +150
150
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 76°C, 4 W PEP, Two - Tone
Case Temperature 79°C, 4 W CW
RθJC
8.8
8.5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S004NT1
1
1 page  
TYPICAL CHARACTERISTICS
18.4 34
18.2 ηD 33
18 32
17.8 31
Gps
17.6 VDD = 28 Vdc, Pout = 2 W (Avg.)
30
17.4 IDQ = 50 mA, 100 kHz Tone Spacing
− 30
17.2 −31
17 IRL −32
16.8 −33
16.6
16.4
1930
1940
1950
IM3
1960 1970
1980
− 34
− 35
1990
f, FREQUENCY (MHz)
Figure 3. Two - Tone Wideband Performance
@ Pout = 2 Watts Avg.
−8
− 12
− 16
− 20
− 24
− 28
20
IDQ = 75 mA
19
62.5 mA
18
50 mA
17 37.5 mA
16
25 mA
15
14
0.01
VDD = 28 Vdc
f1 = 1960 MHz, f2 = 1960.1 MHz
Two −Tone Measurements
0.1 1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
20
− 10
VDD = 28 Vdc, IDQ = 50 mA
−20 f1 = 1960 MHz, f2 = 1960.1 MHz
Two −Tone Measurements
− 30
− 40
3rd Order
− 50
− 60
5th Order
− 70
− 80
0.01
7th Order
0.1 1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
− 25
VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA
−30 (f1 + f2)/2 = Center Frequency of 1960 MHz
− 35
3rd Order
− 40
− 45
−50 5th Order
− 55
7th Order
− 60
0.1 1 10 100
TWO −TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
47
P6dB = 38.73 dBm (7.465 W) Ideal
45
P3dB = 38.22 dBm (6.637 W)
43
41
P1dB = 37.61 dBm (5.768 W)
39
37
Actual
VDD = 28 Vdc, IDQ = 50 mA
35 Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
33
14 16 18 20 22 24 26
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MW6S004NT1
5
5 Page 
PACKAGE DIMENSIONS
A
F
3
BD
1
2R
L
ZONE V
ZONE W
4
N
K 0.35 (0.89) X 45_" 5_
Q
U
H
1ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ4ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ2 C
3
G
S
ZONE X
P
Y
Y
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
4. SOURCE
VIEW Y - Y
CASE 466 - 03
ISSUE D
PLD 1.5
PLASTIC
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1984.
2. CONTROLLING DIMENSION: INCH
3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W,
AND X.
10_DRAFT
E
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
U
ZONE V
ZONE W
ZONE X
INCHES
MIN MAX
0.255 0.265
0.225 0.235
0.065 0.072
0.130 0.150
0.021 0.026
0.026 0.044
0.050 0.070
0.045 0.063
0.160 0.180
0.273 0.285
0.245 0.255
0.230 0.240
0.000 0.008
0.055 0.063
0.200 0.210
0.006 0.012
0.006 0.012
0.000 0.021
0.000 0.010
0.000 0.010
MILLIMETERS
MIN MAX
6.48 6.73
5.72 5.97
1.65 1.83
3.30 3.81
0.53 0.66
0.66 1.12
1.27 1.78
1.14 1.60
4.06 4.57
6.93 7.24
6.22 6.48
5.84 6.10
0.00 0.20
1.40 1.60
5.08 5.33
0.15 0.31
0.15 0.31
0.00 0.53
0.00 0.25
0.00 0.25
RF Device Data
Freescale Semiconductor
MW6S004NT1
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MW6S004NT1.PDF ] | |
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