(PDF) PZT5551 Datasheet - NPN Silicon Planar Epitaxial Transistor

Número de pieza	PZT5551
Descripción	NPN Silicon Planar Epitaxial Transistor
Fabricantes	Weitron Technology
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No Preview Available ! NPN Silicon Planar Epitaxial Transistor BASE 1 COLLECTOR 2,4 3 EMITTER PZT5551 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 SOT-223 4 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Device Marking PZT5551=5551 www.DataSheet4U.com Value 160 180 6 600 1.5 150 -55 to +150 Unit V V V mA W ˚C ˚C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC =1mA,IB=0) Collector-Base Breakdown Voltage (IC =100µA,IE=0) Emitter-Base Breakdown Voltage (IE=10 µA,IC=0) Collector-Emitter Cutoff Current (VCB =120V,IE=0) Emitter-Base Cutoff Current (VEB=4V,IC=0) Symbol Min V(BR)CEO 160 V(BR)CBO 180 Typ - - V(BR)EBO 6 - ICBO - - IEBO - - Max - Unit V -V -V 50 nA 50 nA WEITRON http://www.weitron.com.tw 1/4 05-Jul-05 1 page

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PDF PZT5551 Data sheet ( Hoja de datos )