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Weitron Technology - NPN Silicon Planar Epitaxial Transistor

Numéro de référence PZTA44
Description NPN Silicon Planar Epitaxial Transistor
Fabricant Weitron Technology 
Logo Weitron Technology 





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PZTA44 fiche technique
PZTA44
NPN Silicon Planar Epitaxial Transistor
BASE
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
COLLECTOR
2, 4
3
EMITTER
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
SOT-223
4
Value
400
500
6
300
2
150
-55 to +150
Unit
V
V
V
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(IC =1mA)
Collector-Base Breakdown Voltage
(IC =100µA)
Emitter-Base Breakdown Voltage
(IE=10 µA)
Collector-Emitter Cutoff Current
(VCB =400V)
Collector Cutoff Current
(VCB=400V)
Emitter-Base Cutoff Current
(VEB=4V)
DC Current Gain
(VCE = 10V, I C = 1mA)
(VCE = 10V, I C = 10mA)
(VCE = 10V, I C = 50mA)
(VCE = 10V, I C = 100mA)
Collector-Emitter Saturation Voltages
(IC = 20mA, I B = 2mA)
(IC = 50mA, I B = 5mA)
Base-Emitter Saturation Voltages
(IC = 10mA, I B = 1mA)
Output Capacitance
(VCE = 20 Vdc, f = 1MHz)
Device Marking
PZTA44=44
www.DataSheet4U.com
Symbol Min
V(BR)CEO
400
V(BR)CBO
500
Typ
-
-
V(BR)EBO
ICBO
6
-
-
-
ICES - -
IEBO - -
Max
-
Unit
V
-V
-V
100 nA
500 nA
100 nA
hFE1
hFE2
hFE3
hFE4
VCE(sat)
VBE(sat)
Cob
40
50
45
40
-
-
-
-
--
- 300 -
--
--
- 375
- 750
- 750
46
mV
mV
pF
WEITRON
http://www.weitron.com.tw
1/3
02-Jun-05

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