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Fairchild Semiconductor - PNP General Purpose Amplifier

Numéro de référence BCP51
Description PNP General Purpose Amplifier
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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BCP51 fiche technique
BCP51
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers
and switches requiring collecor currents to 1.0A.
• Sourced from process 77.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
Value
-45
-45
-5.0
-1.5
- 55 ~ 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
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Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = -10mA, IB = 0
IC = -100µA, IE = 0
IE = -10µA, IC = 0
VCB = -30V, IE = 0
VCB = -30V, IE = 0, Ta = 125°C
VEB = -5.0V, IC = 0
hFE
VCE(sat)
VBE(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = -5.0mA, VCE = -2.0V
IC = -150mA, VCE = -2.0
IC = -500mA, VCE = -2.0V
IC = -500mA, IB = -50mA
IC = -500mA, VCE = -2.0V
Min.
-45
-45
-5.0
25
40
25
Units
V
V
V
A
°C
Max. Units
-100
-10
-10
V
V
V
nA
µA
µA
250
-0.5 V
-1.0 V
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2.
Max.
1.0
8.0
125
Units
W
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, August 2004

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