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PDF CGA-6618 Data sheet ( Hoja de datos )
| Número de pieza | CGA-6618 | |
| Descripción | Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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CGA-6618
Product Description
Sirenza Microdevice’s CGA-6618 is a high performance GaAs
HBT MMIC Amplifier. Designed with the InGaP process technol-
ogy for excellent reliability. A Darlington configuration is utilized
for broadband performance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. The CGA-6618 contains two amplifiers for use in
wideband Push-Pull CATV amplifiers requiring excellent second
order performance. The second and third order non-linearities
are greatly improved in the push pull configuration.
CGA-6618Z Pb RoHS Compliant
& GreenPPraeclkimageinary
Dual CATV 1 MHz to 1000 MHz
High Linearity GaAs HBT Amplifier
The matte tin finish on Sirenza’s lead-free package utilizes a post Product Features
annealing process to mitigate tin whisker formation and is RoHS • Now available in Lead Free, RoHS
compliant per EU Directive 2002/95. This package is also manu- Compliant, & Green Packaging
factured with green molding compounds that contain no antimony • Excellent CSO/CTB/XMOD at
trioxide nor halogenated fire retardants.
+34 dBmV Output Power per Tone
• Dual Devices in each SOIC-8 Package simplify
18
Push-Pull configuration PC board layout
Amplifier
Configuration
2
3
4
7
6
5
ELECTRICAL SPECIFICATIONS
Applications
• CATV Head End Driver and Predriver Amplifier
• CATV Line Driver Amplifier
S ym bol
P a ra m e ter
G S m a ll S ig na l G a in
F re q .(M H z )
www.DataSheet4U.com
50
500
870
1000
M in .
1 2 .4
1 2 .0
Ty p .
1 3 .8
1 4 .1
1 3 .4
1 3 .0
Max.
1 4 .4
1 4 .0
O IP 2
O u tp ut S e c o n d O rd e r Inte rc e p t P o in t
To n e S p a c i ng = 1 M H z, P o u t p e r to ne = + 6 d B m
50
250
500
7 0 .0
7 6 .5
7 7 .5
7 2 .0
O IP 3
O u tp ut T hi rd O rd e r In te rc e p t P o in t
To n e S p a c i ng = 1 M H z, P o u t p e r to ne = + 6 d B m
50
500
870
3 8 .0
3 8 .0
3 9 .0
4 0 .0
P1dB
O utp ut P o w e r a t 1 d B G a in C o m p re s s io n
50
500
870
1 9 .5
2 0 .0
2 1 .0
2 1 .5
IR L Inp ut R e turn L o s s
500
1 00 -8 70
1 5 .5
10
ORL
O utp ut R e turn L o s s
500
1 00 -8 70
1 2 .5
9 .0
NF
N o ise F ig ure
B a lun Ins e rtio n L o s s Inc lud e d
50
500
870
5 .3
5 .4
5 .6 6 .6
CSO
W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V
81
C TB
W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V
70
XMOD
W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, + 3 4 d B m V
63
V D e vic e O p e ra ting V o lta g e
D
I D e vice O p e ra ting C urre nt
D
4 .8
144
5 .1
160
5 .4
176
R TH (J-L )
The rm a l R e s is ta nc e (J unc tio n to L e a d )
Test Conditions: VS = 8 V ID = 160 mA Typ. RBIAS = 33 Ohms
TL = 25ºC
35
ZS = ZL = 75 Ohms Push Pull Application Circuit
U n its
dB
dBm
dBm
dBm
dB
dB
dB
dBc
dBc
dBc
V
mA
°C /W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101994 Rev J
1 page  
CGA-6618 Dual GaAs HBT Amplifier
Typical RF Performance - Single Ended - 50 Ohm System
VS=8V, ID=80mA (one amp biased), TL=+25°C, RBIAS=33 Ohms
18
16
14
12
10
8
6
4
2
0
0.0
Gain & Isolation vs. Frequency
Gain (dB)
Isolation (dB)
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
0
-4
-8
-12
-16
-20
-24
-28
-32
-36
4.0
|S11| & |S22| vs. Frequency
0
-5
-10
-15
-20
-25
-30 |S11|
-35
|S22|
-40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Typical RF Performance - Single Ended - 37.5 Ohm System
VS=8V, ID=80mA (one amp biased), TL=+25°C, RBIAS=33 Ohms
18
16
14
12
10
8
6
4
2
0
0.0
Gain & Isolation vs. Frequency
Gain (dB)
Isolation (dB)
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
0
-4
-8
-12
-16
-20
-24
-28
-32
-36
4.0
|S11| & |S22| vs. Frequency
0
-5
-10
-15
-20
-25
-30 |S11|
-35 |S22|
-40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
50 Ohm and 37.5 Ohm Single Ended S-parameter files are available for download at
www.sirenza.com
303 S. Technology Ct., Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-101994 Rev J
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CGA-6618.PDF ] | |
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