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PDF FVP12030IM3LEG1 Data sheet ( Hoja de datos )
| Número de pieza | FVP12030IM3LEG1 | |
| Descripción | Energy Recovery | |
| Fabricantes | Fairchild Semiconductor | |
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FVP12030IM3LEG1
Energy Recovery
March 2007
PDP SPMTM
Feature
• Use of high speed 300V IGBTs with parallel FRDs
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal sub-
strates
Applications
• Energy Recovery Part of a PDP (Plasma Display Panel)
General Description
It is an advanced smart power module(SPMTM) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the energy recovery circuit of
PDP driving system. It combines optimized circuit protection
and drive matched to low-loss and high speed IGBTs. Under
voltage lock-out protection function enhances the system reli-
ability . The high speed built-in HVIC provides opto-couplerless
single power supply IGBT gate driving capability that futher
reduce the overall system size of PDP sustaining boards.
Package Outlines
Figure 1.
©2006 Fairchild Semiconductor Corporation
FVP12030IM3LEG1 Rev. A
1
www.fairchildsemi.com
1 page  
Absolute Maximum Ratings (TC = 25°C, Unless Otherwise Specified)
Symbol
Parameter
Conditions
VCC
Control Supply Voltage
Applied between VCCL-COML, VCCH - COMH
VBS
Control Bias Voltage
Applied between VBL - VSL, VBH - VSH
VIN Input Signal Voltage
Applied between VINL-COML,VINH - COMH
Rating
20
20
-0.3~17
Units
V
V
V
Symbol
Parameter
VCE
Collector to Emitter Voltage
VRRM Peak Repetitive Reverse Voltage
VIN Input Signal Voltage
Conditions
Between CL to EL, Between CH to EH
VGH-EH=VGL-EL=0V , ICH=ICL=250µA
Between KH to EH, Between CL to AL
IAH=IAL=250µA
Between CH to EH, Between CL to EL
IAH=IAL=250µA
VINL, VINH
IC
IF(AV)
ICP
IFP
Collector Current Continuous
Average Rectified Forward Current
Pulsed Collector Current
Pulsed Diode Current
Notes :
1 Pulse Width = 100µsec, Duty = 0.1; half sine wave
*Icp limited by MAX Tj
Between CL to EL, Between CH to EH
Between EH to KH, Between AL to CL
per diode
Between EH to CH Between EL to CL
Between CL to EL, Between CH to EH (Note1)
Between EH to KH, Between AL to CL(Note1)
Between EH to CH Between EL to CL
per diode (Note1)
Rating
300
300
300
-0.3 to
VCC+0.3
120
30
10
300
300
100
Units
V
V
V
V
A
A
A
A
A
A
Symbol
Parameter
IGBT Dissipation
Pd
FRD Dissipation
Tj
TC
TSTG
VISO
Operating Junction Temperture
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
Tc=25°C per IGBT
Tc=100°C per IGBT
Tc=25°C per diode
Tc=100°C per diode
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to IMS substrate
Rating
117
47
109
43
-20 ~ 150
-20 ~ 125
-40 ~ 125
1500
Units
W
W
W
W
°C
°C
°C
Vrms
Thermal Resistance
Symbol
Rth(j-c)
Parameter
Junction to Case Thermal
Resistance
Conditions
Between CH to EH, Between CL to EL Per IGBT
Between EH to KH, Between AL to CL
Between CH to EH, Between CL to EL Per Diode
Min.
-
-
-
Max.
1.07
1.15
3.70
Units
°C/W
°C/W
°C/W
FVP12030IM3LEG1 Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FVP12030IM3LEG1.PDF ] | |
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