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Numéro de référence | CEB21A2 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
1 Page
CEP21A2/CEB21A2
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V.
RDS(ON) = 70mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
20
±12
25
75
43
0.29
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
62.5
Units
C/W
C/W
2003.July
4 - 66
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEB21A2 ] |
No | Description détaillée | Fabricant |
CEB21A2 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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