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Numéro de référence | PN2369 | ||
Description | NPN Switching Transistor | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21.
February 2008
MMBT2369
PN2369
C
E
B SOT-23
Mark: 1J
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * Ta = 25×C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
ICP
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
**Collector Current (Pulse)
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Ratings
15
40
4.5
200
400
-55 ~ 150
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”.
Max.
350
2.8
125
357
Units
V
V
V
mA
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ PN2369 ] |
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