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What is KSB811?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "PNP Epitaxial Silicon Transistor".


KSB811 Datasheet PDF - Fairchild Semiconductor

Part Number KSB811
Description PNP Epitaxial Silicon Transistor
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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KSB811
Audio Frequency Power Amplifier
• Complement to KSD1021
• Collector Current : IC= -1A
• Collector Power Dissipation : PC=350mW
1 TO-92S
1.Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-30
-25
-5
-1.0
350
150
-55 ~ 150
Units
V
V
V
A
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE (sat)
VBE (sat)
fT
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
IC= -100µA, IE= 0
IC= -10mA, IB= 0
IE= -100µA, IC= 0
VCB= -30V, IE=0
VCE= -1V, IC= -100mA
IC= -1A, IB= -0.1A
IC= -1A, IB= -0.1A
VCE= -6V, IC= -10mA
VCB= -6V, IE=0, f=1MHz
Min.
-30
-25
-5
70
Typ.
110
18
Max.
-0.1
400
-0.5
-1.2
Units
V
V
V
µA
V
V
MHz
pF
hFE Classification
Classification
hFE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001


Part Details

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