DataSheetWiki


XD010-22S-D2F fiches techniques PDF

Sirenza Microdevices - Class A/AB 12W Power Amplifier Module

Numéro de référence XD010-22S-D2F
Description Class A/AB 12W Power Amplifier Module
Fabricant Sirenza Microdevices 
Logo Sirenza Microdevices 





1 Page

No Preview Available !





XD010-22S-D2F fiche technique
Product Description
Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2-
stage Class A/AB amplifier module for use in the driver stages of GSM/
EDGE RF power amplifiers for cellular base stations. The power transistors
are fabricated using Sirenza's latest, high performance LDMOS process.
This unit operates from a single voltage and has internal temperature com-
pensation of the bias voltage to ensure stable performance over the full
temperature range. It is a drop-in, no-tune solution for medium power
applications requiring high efficiency, excellent linearity, and unit-to-unit
repeatability. It is internally matched to 50 ohms.
Functional Block Diagram
Stage 1
Stage 2
Temperature
Compensation
12
Temperature
Compensation
34
5
RF in
V VD1 D2
Case Flange = Ground
RF out
XD010-22S-D2F
1805-1880 MHz Class A/AB
12W Power Amplifier Module
Product Features
50 W RF impedance
12W Output P1dB
Single Supply Operation : Nominally 28V
High Gain: 31 dB at 1840 MHz
High Efficiency: 25% at 1840 MHz
Advanced, XeMOS II LDMOS FETS
Temperature Compensation
Applications
Base Station PA driver
Repeater
GSM / EDGE
Key Specifications
Symbol
Parameter
Frequency
Frequency of Operation
P1dB
Gain
Output Power at 1dB Compression (single tone)
Gain at 5W Output Power (CW)
Gain Flatness
Peak to Peak Gain Variation
IRL Input Return Loss 5W Output (CW)
Efficiency
Drain Efficiency at 10W CW
RMS EVM at 5W EDGE output
Linearity
Peak EVM at 5W EDGE output
3rd Order IMD at 10W PEP (Two Tone; 1MHz F)
Delay
Electrical Delay
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
RTH, j-l
RTH, j-2
Thermal Resistance Stage 1 (Junction to Case)
Thermal Resistance Stage 2 (Junction to Case)
Test Conditions Zin = Zout = 50, VDD = 28.0V, IDQ1 = 230mA, IDQ2 = 115mA, TFlange = 25ºC
Unit
MHz
W
dB
dB
dB
%
%
%
dBc
nS
Deg
ºC/W
ºC/W
Min.
1805
10
28.5
10
20
-26
Typ.
12
31
0.5
14
25
1.5
5
-32
2.5
0.5
11
4
Max.
1880
1.0
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-102930 Rev C

PagesPages 5
Télécharger [ XD010-22S-D2F ]


Fiche technique recommandé

No Description détaillée Fabricant
XD010-22S-D2F Class A/AB 12W Power Amplifier Module Sirenza Microdevices
Sirenza Microdevices

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche