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Sirenza Microdevices - Class AB 10W Power Amplifier Module

Numéro de référence XD010-04S-D4FY
Description Class AB 10W Power Amplifier Module
Fabricant Sirenza Microdevices 
Logo Sirenza Microdevices 





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XD010-04S-D4FY fiche technique
Product Description
Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust
broadband 2-stage Class A/AB amplifier, suitable for use as a power ampli-
fier driver or output stage. The power transistors are fabricated using
Sirenza's latest, high performance LDMOS process. It is a drop-in, no-
tune, solution for high power applications requiring high efficiency, excel-
lent linearity, and unit-to-unit repeatability. Internal bias current compensa-
tion ensures stable performance over a wide temperature range. It is
internally matched to 50 ohms.
XD010-04S-D4F
XD010-04S-D4FY Pb RoHS Compliant
& Green Package
350-600 MHz Class AB
12W Power Amplifier Module
Functional Block Diagram
Stage 1
Stage 2
Bias
Network
12
Temperature
Compensation
3
4
Product Features
Available in RoHS compliant packaging
50 W RF impedance
12W Output P1dB
Single Supply Operation : Nominally 28V
High Gain: 32 dB at 450 MHz
High Efficiency: 30% at 450 MHz
Robust 8000V ESD (HBM), Class 3B
XeMOS II LDMOS FETS
Temperature Compensation
RF in
V VD1 D2
Case Flange = Ground
RF out
Key Specifications
Applications
DTV
Public Service
Wireless Infrastructure
Military Communications
Symbol
Parameter
Unit
Frequency
Frequency of Operation
MHz
P1dB
Gain
Output Power at 1dB Compression, 450MHz
Gain at 10W Output Power, 450MHz
W
dB
Gain Flatness
Peak to Peak Gain Variation, 350 - 600MHz
dB
IRL
Input Return Loss 1W Output Power, 350 - 600MHz
dB
Efficiency
Linearity
Drain Efficiency at 10W CW, 350-600MHz
3rd Order IMD at 10W PEP (Two Tone), 450MHz & 451MHz
%
dBc
Delay
Signal Delay from Pin 1 to Pin 4
nS
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
Frequency
Frequency of Operation
MHz
RTH, j-l
RTH, j-2
Thermal Resistance Stage 1 (Junction-to-Case)
Thermal Resistance Stage 2 (Junction-to-Case)
ºC/W
ºC/W
Test Conditions Zin = Zout = 50, VDD = 28.0V, IDQ1 = 230 mA, IDQ2 =150 mA, TFlange = 25ºC
Min.
350
-
30
-
10
26
-
-
-
350
Typ.
-
12
32
1.0
15
30
-32
2.5
0.5
-
11
4
Max.
600
-
-
2.0
-
-
-28
-
-
600
1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and
all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-104259 Rev D

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