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Cystech Electonics - NPN Epitaxial Planar Transistor

Numéro de référence BTD1766M3
Description NPN Epitaxial Planar Transistor
Fabricant Cystech Electonics 
Logo Cystech Electonics 





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BTD1766M3 fiche technique
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1766M3
Features
Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
Excellent current gain characteristics
Complementary to BTB1188M3
Spec. No. : C842M3
Issued Date : 2003.05.25
Revised Date :
Page No. : 1/4
Symbol
BTD1766M3
Outline
SOT-89
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
VCBO
VCEO
VEBO
IC
ICP
Pd
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Note : 1. Single Pulse , Pw=10ms
Tstg
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
BTD1766M3
Limits
40
30
5
2
5 (Note 1)
0.5
2 (Note 2)
150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
CYStek Product Specification

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