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PDF NJ1800DL Data sheet ( Hoja de datos )
| Número de pieza | NJ1800DL | |
| Descripción | Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET | |
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F-46
NJ1800DL Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
¥ Low-Noise
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Device in this Databook based on the NJ1800DL Process.
Datasheet
IF1801
www.DataSheet4U.com
01/99
DG
S
Die Size = 0.052" X 0.052"
All Bond Pads ≥ 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ1800DL Process
Min Typ Max Unit
Test Conditions
V(BR)GSS – 15 – 25
V IG = – 1 µA, VDS = ØV
IGSS – 30 – 100 pA VGS = – 10V, VDS = ØV
IDSS 50
800 mA VDS = 10V, VGS = ØV
VGS(OFF) – 0.1
– 4 V VDS = 10V, ID = 1 nA
gfs
350
mS VDS = 10V, VGS = ØV
f = 1 kHz
Ciss
160
pF ID = 1 mA, VGS = ØV
f = 1 MHz
Crss
50
pF VDS = 10V, VGS = ØV
f = 1 MHz
e¯N
0.7 nV/√HZ VDG = 4V, ID = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NJ1800DL.PDF ] | |
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