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PDF NJ132L Data sheet ( Hoja de datos )
| Número de pieza | NJ132L | |
| Descripción | Silicon Junction Field-Effect Transistor Low-Noise Amplifier | |
| Fabricantes | InterFET | |
| Logotipo |  |
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F-34
NJ132L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ132L Process.
Datasheet
2N6451, 2N6452
2N6453, 2N6454
IF1320
IFN152
2SK152
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
NJ132L Process
Static Electrical Characteristics
Min Typ Max Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V(BR)GSS – 15 – 25
V IG = – 1 µA, VDS = ØV
IGSS – 50 – 100 nA VGS = – 10V, VDS = ØV
IDSS 5
100 mA VDS = 10V, VGS = ØV
VGS(OFF) – 0.5
– 7 V VDS = 10V, ID = 1 nA
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
(pulsed)
gfs
gfs
Ciss
Ciss
e¯N
15
15
15
3.5
1
mS VDS = 10V, VGS = ØV
mS VDS = 10V, ID = 5 mA
pF VDS = 10V, VGS = ØV
pF VDS = ØV, VGS = – 10V
nV/√HZ VDS = 4V, ID = 5 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NJ132L.PDF ] | |
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