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NJ450L fiches techniques PDF

InterFET - Silicon Junction Field-Effect Transistor

Numéro de référence NJ450L
Description Silicon Junction Field-Effect Transistor
Fabricant InterFET 
Logo InterFET 





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NJ450L fiche technique
F-38
NJ450L Process
Silicon Junction Field-Effect Transistor
¥ Low-Current
¥ Low Gate Leakage Current
¥ High Input Impedance
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ450L Process.
Datasheet
2N6550
IF4500
IF4501
IFN860
01/99
G
S-D
S-D
G
Die Size = 0.028" X 0.028"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
www.DataSheet4U.com
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
NJ450L Process
Min Typ Max Unit
Test Conditions
V(BR)GSS
IGSS
IDSS
VGS(OFF)
– 25
5
– 0.1
– 25
– 50
–4
V IG = – 1 µA, VDS = ØV
pA VGS = – 15V, VDS = ØV
mA VDS = 15V, VGS = ØV
V VDS = 15V, ID = 1 nA
gfs
100
mS VDS = 15V, VGS = ØV
f = 1 kHz
Ciss
35
pF VDS = ØV, VGS = – 10V
f = 1 MHz
Crss
10
pF VDS = ØV, VGS = – 10V
f = 1 MHz
N
0.9 nV/HZ VDG = 4V, ID = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com

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