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PDF PJ32 Data sheet ( Hoja de datos )
| Número de pieza | PJ32 | |
| Descripción | Silicon Junction Field-Effect Transistor General Purpose Amplifier | |
| Fabricantes | InterFET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PJ32 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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F-20
PJ32 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the PJ32 Process.
Datasheet
2N5020, 2N5021
2N5460, 2N5461
2N5462
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.018" X 0.018"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
PJ32 Process
Min Typ Max Unit
Test Conditions
V(BR)GSS
IGSS
IDSS
VGS(OFF)
30
–1
0.5
50 V IG = 1 µA, VDS = Ø
1 2 nA VGS = 15V, VDS = Ø
– 15 mA VDS = – 15V, VGS = Ø
7 V VDS = – 15V, ID = 1 nA
gfs
2.5
mS VDS = – 15V, VGS = Ø
f = 1 kHz
Ciss
3.2 pF VDS = Ø, VGS = 10
f = 1 MHz
Crss
1.7 pF VDS = Ø, VGS = 10
f = 1 MHz
e¯N
10 nV/√HZ VDS = 10V, VGS = Ø
f = 1 Hz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PJ32.PDF ] | |
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