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A1020 fiches techniques PDF

ETC - Silicon PNP Epitaxial Transistor

Numéro de référence A1020
Description Silicon PNP Epitaxial Transistor
Fabricant ETC 
Logo ETC 





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A1020 fiche technique
A1020
A1020 Silicon PNP Epitaxial Transistor
Description: The A1020 is designed for use in power amplifier applications and power
switching applications
Features: Low collector saturation voltage
Complementary to C2328
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
Emitter
760um×760um
210±20um
160×170um
130×260um
Al
Au
60um
6 inch
Electrical Characteristics( Ta=25)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
ICBO
IEBO
BVCBO
BVCEO
BVEBO
hFE
VCB=-35V, IE=0
VEB=-5V, IC=0
IC=-0.1mA
IC=-10mA
IE=-0.1mA
VCE=-2V, IC=-0.5A
Collector Saturation Voltage
VCE(sat) IC=-1A, IB=-50mA
Min Max
-0.1
-0.1
-40
-30
-5.0
80 400
-0.5
Unit
uA
uA
V
V
V
V
May.2004
Version :0.0
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