|
|
Numéro de référence | A1020 | ||
Description | Silicon PNP Epitaxial Transistor | ||
Fabricant | ETC | ||
Logo | |||
1 Page
A1020
A1020 Silicon PNP Epitaxial Transistor
Description: The A1020 is designed for use in power amplifier applications and power
switching applications
Features: ●Low collector saturation voltage
●Complementary to C2328
Chip Appearance
Chip Size
Chip Thickness
Bonding Pad Size
Front Metal
Backside Metal
Scribe line width
Wafer Size
Base
Emitter
760um×760um
210±20um
160×170um
130×260um
Al
Au
60um
6 inch
Electrical Characteristics( Ta=25℃)
Characteristic
Symbol
Test Condition
Collector Cutoff Current
Emitter Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
ICBO
IEBO
BVCBO
BVCEO
BVEBO
hFE
VCB=-35V, IE=0
VEB=-5V, IC=0
IC=-0.1mA
IC=-10mA
IE=-0.1mA
VCE=-2V, IC=-0.5A
Collector Saturation Voltage
VCE(sat) IC=-1A, IB=-50mA
Min Max
-0.1
-0.1
-40
-30
-5.0
80 400
-0.5
Unit
uA
uA
V
V
V
V
May.2004
Version :0.0
Page 1 of 1
|
|||
Pages | Pages 1 | ||
Télécharger | [ A1020 ] |
No | Description détaillée | Fabricant |
A1020 | Silicon PNP Epitaxial Transistor | ETC |
A1020 | PNP Transistor - 2SA1020 | Toshiba Semiconductor |
A1020B | (A1010B / A1020B) FPGAs | Actel Corporation |
A1020B | FPGAs | Actel |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |