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PDF M2045S Data sheet ( Hoja de datos )

Número de pieza M2045S
Descripción (M2035S / M2045S) High Voltage Trench MOS Barrier Schottky Rectifier
Fabricantes Vishay Intertechnology 
Logotipo Vishay Intertechnology Logotipo



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No Preview Available ! M2045S Hoja de datos, Descripción, Manual

M2035S & M2045S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
TO-220AB
3
2
1
12
3 CASE
www.DataSheet4U.com
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
Tj max.
20 A
35 V, 45 V
200 A
0.55 V
150 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, free-wheeling diodes,
dc-to-dc converters or polarity protection applications.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Peak repetitive reverse current per leg at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dv/dt
TJ, TSTG
M2035S
M2045S
35 45
20
200
2.0
10000
- 55 to + 150
UNIT
V
A
A
A
V/µs
°C
Document Number 88953
24-Jul-06
www.vishay.com
1

1 page





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