|
|
PDF XP1024-BD Data sheet ( Hoja de datos )
| Número de pieza | XP1024-BD | |
| Descripción | GaAs MMIC Power Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de XP1024-BD (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
26.0-31.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 17-Apr-07
Features
Balanced Design Provides Good Output Match
On-Chip Temperature Compensated Output
Power Detector
32.0 dB Small Signal Gain
+36.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
P1024-BD
Chip Device Layout
XP1024-BD
General Description
Mimix Broadband’s four stage 26.0-31.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +36.0 dBm.The
device also includes Lange couplers to achieve good
output return loss and an on-chip temperature
compensated output power detector.This MMIC uses
Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
Thewww.DataSheet4U.com chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
1700 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF TAble4
MTTF Table 4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Units
Frequency Range (f )
GHz
Input Return Loss (S11)
dB
Output Return Loss (S22)
dB
Small Signal Gain (S21)
dB
Gain Flatness ( S21)
dB
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB) 2
Output Third Order Intercept Point (OIP3)1,2
dB
dBm
dBm
Drain Bias Voltage (Vd1,3,4)
VDC
Gate Bias Voltage (Vg1,2,3,4)
VDC
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm3
mA
VDC
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vdet1,2=1.0V or Vdet1,2=5.5V and Rdet=5.6k
Min.
26.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
7.0
12.0
32.0
+/-1.0
50.0
+26.0
+36.0
+4.5
-0.7
1100
0.7
Max.
31.0
-
-
-
-
-
-
-
+5.5
0.0
1400
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
26.0-31.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 17-Apr-07
P1024-BD
App Note [1] Biasing - It is recommended to separately bias the upper and lower amplifiers at Vd(1)=4.5V Id(1+2)=220mA, and
Vd(3,4)=4.5V Id(3a+3b)=Id(4a+4b)=440mA, although best performance will result in separately biasing Vd1 through Vd4, with
Id1=80mA, Id2=140mA, Id3a=Id3b=Id4a=Id4b=220mA. It is recommended to use active biasing to keep the currents constant as the
RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in
series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus
drain voltage.The typical gate voltage needed to do this is -0.7V.Typically the gate is protected with Silicon diodes to limit the applied
voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] On-board Detector - The output signal of the power amplifier is coupled via a capacitively coupled detector, which
comprises a diode connected to the signal path, and a second diode circuit used to provide a temperature compensation signal.The
common bias terminal is Vdet1,2, and is nominally set to forward bias both diodes.The bias is normally provided in 1 of 2 ways.The
Vdet1,2 port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current.
Alternatively, Vdet1,2 can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rdet in the range 3 - 6k .
App Note [3] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,3,4 and Vg1,2,3,4) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
126.0 deg Celsius
150.9 deg Celsius
175.3 deg Celsius
Rth
14.4° C/W
15.3° C/W
16.2° C/W
MTTF Hours
FITs
1.19E+09
8.12E+07
7.74E+06
8.38E-01
1.23E+01
1.29E+02
Bias Conditions: Vd1=Vd2=Vd3a/b=Vd4a/b=4.5V
Id1=80 mA, Id2=140 mA, Id3a=Id3b=Id4a=Id4b=220 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet XP1024-BD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| XP1024-BD | GaAs MMIC Power Amplifier | Mimix Broadband |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |