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PDF XU1002-QD Data sheet ( Hoja de datos )
| Número de pieza | XU1002-QD | |
| Descripción | GaAs Transmitter | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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17.0-25.0 GHz GaAs Transmitter
QFN, 7x7mm
November 2006 - Rev 21-Nov-06
U1002-QD
Features
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
+13 dBm P1dB
2.0 dBm LO Drive Level
20.0 dB Image Rejection, 9.0 dB Conversion Gain
7x7 mm, QFN
General Description
Mimix Broadband’s 17.0-25.0 GHz GaAs MMIC transmitter has a
+13.0 dBm output P1dB and 20.0 dB image rejection across the
band.This device is an image reject sub-harmonic anti-parallel
diode mixer followed by a balanced two stage output amplifier
and includes an integrated LO buffer amplifier.The image reject
mixer reduces the need for unwanted sideband filtering before
the power amplifier.The use of a sub-harmonic mixer makes the
provision of the LO easier than for fundamental mixers at these
frequencies. I and Q mixer inputs are provided and an external
90 degree hybrid is required to select the desired sideband.This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.The
device comes in a 7x7mm QFN surface mount laminate
package that is RoHS compliant.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.0 VDC
320, 165 mA
+0.5 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table1
MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 17.0 - 25.0
Frequency Range (RF) Lower Side Band
GHz 17.0 - 21.0
Frequency Range (LO)
GHz 7.0
- 14.0
Frequency Range (IF)
GHz DC - 3.0
Output Return Loss RF (S22)
dB - 14.0 -
Small Signal Conversion Gain IF/RF (S21)
dB - 9.0 -
LO Input Drive (PLO)
dBm - +2.0 -
Image Rejection
dBc - 20.0 -
2xLO Leakage @ RF
dBm - -10.0 -
Output Third Order Intercept (OIP3)
dBm - +23.0 -
Drain Bias Voltage (Vd1)
VDC - +4.0 +4.5
Drain Bias Voltage (Vd2)
VDC - +4.0 +4.5
Gate Bias Voltage (Vg1,2)
VDC -1.2 -0.1 +0.3
Supply Current (Id1) (Vd1=4.0V, Vg=-0.1V Typical)
mA - 230 280
Supply Current (Id2) (Vd2=4.0V, Vg=-0.1V Typical)
mA - 116 140
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
17.0-25.0 GHz GaAs Transmitter
QFN, 7x7mm
November 2006 - Rev 21-Nov-06
U1002-QD
App Note [1] Biasing - This device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=230mA and Vd2=4.0V,
Id2=116mA. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives
the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may
be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the
current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed
to do this is -0.1V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
MTTF Tables
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.
1.0E+09
MTTF vs. Backplate Temperature
1.0E+08
1.0E+07
1.0E+06
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
1.0E+00
20 30 40 50 60 70 80 90 100 110
Temperature (degrees)
Bias Conditions: Vd1=4.0V, Vd2=4.0V, Id1=230 mA, Id2=116 mA
Typical Application
XU1002-QD
XB1004
XP1013
IF IN
2 GHz
Sideband
Reject
RF Out
17.7-23.6 GHz
LO(+2.0dBm)
7.85-10.8 GHz (USB Operation)
9.85-10.85 GHz (LSB Operation)
Mimix Broadband MMIC-based 19.0-26.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 26 GHz)
Mimix Broadband's 17.0-25.0 GHz XU1002-QD GaAs MMIC Transmitter can be used in saturated radio applications and
linear modulation schemes up to 16 QAM.The transmitter can be used in upper and lower sideband applications from
19.0-26.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet XU1002-QD.PDF ] | |
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