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PDF 30CTH02-1 Data sheet ( Hoja de datos )

Número de pieza 30CTH02-1
Descripción (30CTH02xx) Hyperfast Rectifier
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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Bulletin PD-20768 rev. C 09/04
30CTH02
30CTH02S
30CTH02-1
30CTH02FP
Hyperfast Rectifier
Features
• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
trr =30ns max.
IF(AV) = 30Amp
VR = 200V
Description/ Applications
International Rectifier's 200V series are the state of the art Hyperfast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
free-wheeling diode in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
VRRM
IF(AV)
IFSM
TJ, TSTG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ TC = 159°C Per Diode
@ TC = 125°C (FULLPACK) Per Diode
Per Device
Non Repetitive Peak Surge Current @ TJ = 25°C
Operating Junction and Storage Temperatures
Max
200
15
30
200
- 65 to 175
Units
V
A
°C
30CTH02
Case Styles
30CTH02S
30CTH02-1
30CTH02FP
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-220AB
www.irf.com
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
D2PAK
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-262
1
Anode
2
Common
Cathode
3
Anode
TO-220 FULLPACK
1

1 page




30CTH02-1 pdf
30CTH02, 30CTH02S, 30CTH02-1, 30CH02FP
Bulletin PD-20768 rev. C 09/04
100
IF = 15 A
1000
IF = 15 A
V R = 390V
T J = 125˚C
T J = 25˚C
10
100 1000
di F /dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. di F /dt
100
V R = 390V
T J = 125˚C
T J = 25˚C
10
100 1000
di F /dt (A/µs )
Fig. 10 - Typical Stored Charge vs. di F /dt
www.irf.com
Reverse Recovery Circuit
VR = 200V
L = 70µH
0.01
D.U.T.
diF /dt
dif/dt
ADJUST G
D
IRFP250
S
Fig. 11- Reverse Recovery Parameter Test Circuit
5

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