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PDF FDZ291P Data sheet ( Hoja de datos )

Número de pieza FDZ291P
Descripción P-Channel 1.5 V Specified PowerTrench BGA MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDZ291P Hoja de datos, Descripción, Manual

February 2006
FDZ291P
P-Channel 1.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 1.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ291P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
Battery management
Load switch
Battery protection
Features
–4.6 A, –20 V
RDS(ON) = 40 m@ VGS = –4.5 V
RDS(ON) = 60 m@ VGS = –2.5 V
RDS(ON) = 160 m@ VGS = –1.5 V
Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
Ultra-thin package: less than 0.85 mm height when
mounted to PCB
Outstanding thermal transfer characteristics:
4 times better than SSOT-6
Ultra-low Qg x RDS(ON) figure-of-merit
High power and current handling capability.
GATE
S
G
Bottom
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
D
FDZ291P
13”
D
Ratings
–20
±8
–4.6
–10
1.7
–55 to +150
72
2
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
10000 units
©2006 Fairchild Semiconductor Corporation
FDZ291P Rev. C2 (W)

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FDZ291P pdf
Dimensional Pad and Layout
FDZ291P Rev. C2 (W)

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