|
|
Numéro de référence | IRF1312PbF | ||
Description | (IRF1312xPbF) HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
www.DataSheet4U.com
Applications
l High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
l Lead-Free
PD- 95409A
IRF1312PbF
IRF1312SPbF
IRF1312LPbF
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
10mΩ
ID
95A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF1312
D2Pak
IRF1312S
TO-262
IRF1312L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
95
67
380
3.8
210
1.4
± 20
5.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Notes through are on page 11
www.irf.com
Typ.
–––
0.50
–––
–––
Max.
0.75
–––
62
40
Units
°C/W
1
12/23/04
|
|||
Pages | Pages 11 | ||
Télécharger | [ IRF1312PbF ] |
No | Description détaillée | Fabricant |
IRF1312PbF | (IRF1312xPbF) HEXFET Power MOSFET | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |