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Fairchild Semiconductor - 35V N-Channel PowerTrench MOSFET

Numéro de référence FDD6635
Description 35V N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDD6635 fiche technique
www.DataSheet4U.com
February 2007
FDD6635
35V N-Channel PowerTrench® MOSFET
tm
General Description
This N-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
Inverter
Power Supplies
Features
59 A, 35 V
RDS(ON) = 10 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
Fast Switching
RoHS compliant
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VDS(Avalanche)
VGSS
ID
Parameter
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Ratings
35
40
±20
59
15
100
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
(Note 5)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
113
55
3.8
1.6
–55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b)
2.7
40
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
FDD6635
FDD6635
D-PAK (TO-252)
13’’
12mm
Units
V
V
V
A
mJ
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDD6635 Rev. C2(W)
www.fairchildsemi.com

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