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FDS6676AS fiches techniques PDF

Fairchild Semiconductor - 30V N-Channel PowerTrench SyncFET

Numéro de référence FDS6676AS
Description 30V N-Channel PowerTrench SyncFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS6676AS fiche technique
November 2005
www.DataSheet4U.com
FDS6676AS
30V N-Channel PowerTrench® SyncFET
General Description
The FDS6676AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
14.5 A, 30 V. RDS(ON) max= 6.0 m@ VGS = 10 V
RDS(ON) max= 7.25 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6676AS
FDS6676AS
13’’
FDS6676AS
FDS6676AS_NL (Note 3)
13’’
©2004 Fairchild Semiconductor Corporation
54
63
72
81
Ratings
30
±20
14.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2500 units
FDS6676AS Rev B

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