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XB01SB04A2BR fiches techniques PDF

Torex Semiconductor - Schottky Barrier Diode

Numéro de référence XB01SB04A2BR
Description Schottky Barrier Diode
Fabricant Torex Semiconductor 
Logo Torex Semiconductor 





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XB01SB04A2BR fiche technique
XB01SB04A2BR
Schottky Barrier Diode 1A, 40V Type
ETR1601_001
GENERAL DESCRIPTION
XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for
compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.
APPLICATIONS
Rectification of compact DC/DC converter
Surge absorption caused by counter force of
compact motors
Energy-saving for notebook PCs, hand-set
Protection against reverse connection of
battery
FEATURES
1A, 40V Type
Low VF 0.49V @1A (TYP.)
Low IR 4μA @40V (TYP.)
Small Package : SOD-123
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
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Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous Forward Surge Current*1
Junction Temperature
VRM
VR
IF(AV)
IFSM
Tj
Storage Temperature Range
Tstg
*1: Non continuous high amplitude 60Hz half-sine wave.
RATINGS
40
40
1
10
125
-55~+150
Ta = 25
UNIT
V
V
A
A
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
LIMITS
TYP.
Forward Voltage (DC)
Reverse Current (DC)
VF
IR
IF=1A
VR=40V
0.49
4
Inter-Terminal Capacity
Ct
VR=10V, f=1MHz
35
Reverse Recovery Current *2
trr
IF=IR=10mA, irr=1mA, RL=100Ω
25
Note) 1.This product has a weakness for an electroshock such as electrostatic.
Please be careful of an electrification to human body and an electric leakage in the application.
2. *2: trr measurement circuit
MAX.
0.54
200
Ta=25
UNITS
V
μA
pF
ns
Bias
Pulse Generatrix
A
Oscilloscope
IF
trr
0
irr
IR
t
1/4

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