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Shantou Huashan Electronic - PNP SIlicon Transistor

Numéro de référence H772
Description PNP SIlicon Transistor
Fabricant Shantou Huashan Electronic 
Logo Shantou Huashan Electronic 





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H772 fiche technique
Shantou Huashan Electronic Devices Co.,Ltd.
P NP S I L I C O N T R A N S I S T O R
H772
Audio Frequency Power Amplifier , Switching Power Amplifier.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation Tc=25
PC Collector Dissipation TA=25
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter- Base Voltage
IC Collector Current DC
Ib Base Current DC
55~150
150
10W
1W
-40V
-30V
-5V
-3A
-0.6A
TO-126ML
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
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Symbol
Parameter
Min Typ Max Unit
Test Conditions
ICBO Collector-Base Cutoff Current
VCB=-30V, IE=0
IEBO
hFE
VCE sat
Emitter- Base Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
VEB=-5V, IC=0
VCE=-2V, IC=-1A
IC=-2A, IB=-0.2A
VBE sat Base -Emitter Saturation Voltage
IC=-2A, IB=-0.2A
Cob Output Capacitance
VCB=-10V,IE=0,f=1MHz
fT Current Gain-Bandwidth Product
VCE=-5V IE=-0.1A
hFE Classification
R
60 120
100 200
160 320
200 400

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