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3001 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GHz Technology - Class C Microwave

شماره قطعه 3001
شرح مفصل Class C Microwave
تولید کننده GHz Technology 
آرم GHz Technology 


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3001 شرح
3001
1 Watt - 28 Volts, Class C
Microwave 3000 MHz
GENERAL DESCRIPTION
The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class
C, RF output power at 3000 MHz. Gold metalization and diffused ballasting
are used to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder Sealed package.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
5 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic Collector Current
50 Volts
3.5 Volts
0.20 A
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55BT, STYLE 1
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 3.0 GHz
Vcb = 28 Volts
Po = 1 Watts
As Above
F =3 GHz, Po = 1 W
MIN
1.0
7.0
TYP
.14
8.5
30
MAX UNITS
Watt
0.2 Watt
dB
%
30:1
BVces
BVcbo
BVebo
Icbo
hFE
Cob
θjc
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ic = 1 mA
Ie = 1 mA
Vcb = 28 Volts
Vce = 5 V, Ic = 100 mA
F = 1 MHz, Vcb = 28 V
50
45
3.5
10
Issue August 1996
Volts
Volts
Volts
0.5 mA
35 oC/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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