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PDF BFN17 Data sheet ( Hoja de datos )
| Número de pieza | BFN17 | |
| Descripción | SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995 7
BFN17
C
COMPLEMENTARY TYPE - BFN16
PARTMARKING DETAILS - DG
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT
Collector-Base
Breakdown Voltage
V(BR)CBO -250
V
Collector-Emitter
Breakdown Voltage
V(BR)CEO -250
V
-250
-250
-5
-500
-200
-100
-1
-65 to +150
CONDITIONS.
IC=-100µA
IC=-1mA
V
V
V
mA
mA
mA
W
°C
Emitter-Base Breakdown V(BR)EBO -5
Voltage
V IE=-100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
-100
-20
-100
-0.4
nA
µA
nA
V
VCB=-250V
VCB=-250V, Tamb=150 °C
VEB=-3V
IC=-20mA, IB=-2mA
Base-Emitter Saturation VBE(sat)
Voltage
-0.9 V
IC=-20mA, IB=-2mA
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
25
40
40
Typ.100
MHz
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
IC=-20mA, VCE=-10V*
f=20MHz
Output Capacitance
Cobo
Typ. 2.5
pF VCB=-30V,f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA92 datasheet
3 - 43
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFN17.PDF ] | |
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