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PDF BFN37 Data sheet ( Hoja de datos )
| Número de pieza | BFN37 | |
| Descripción | SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
BFN37
ISSUE 4 JANUARY 1996 7
FEATURES
* High VCEO and Low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:- BFN36
PARTMARKING DETAIL:- BFN37
ABSOLUTE MAXIMUM RATINGS.
C
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-250 V
Collector-Emitter Voltage
VCEO
-250 V
Emitter-Base Voltage
VEBO
-5 V
Continuous Collector Current
IC
-500 mA
Power Dissipation at Tamb=25°C
Ptot
-2 W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-250
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-250
V IC=-1mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V IE=-100µA
Collector Cut-Off
Current
Emitter Cut-Off
Current
ICBO
IEBO
-100 nA
-20 µA
-100 nA
VCB=-200V
VCB=-200V
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.4 V
IC=-20mA, IB=-2mA*
Base Emitter
Saturation Voltage
VBE(sat)
-0.9 V
IC=-20mA, IB=-2mA*
Static Forward
hFE
Current Transfer Ratio
Transition Frequency fT
25
40
40
100
MHz
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=10V*
IC=-20mA, VCE=-10V
f=100MHz
Output Capacitance Cobo
2.5 pF VCB=-30V, f=1MHz
Tamb =150°C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 47
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFN37.PDF ] | |
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