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PDF RD00HHS1 Data sheet ( Hoja de datos )
| Número de pieza | RD00HHS1 | |
| Descripción | RoHS Compliance | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
DESCRIPTION
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
1.5+/-0.1
LOT No.
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
www.DataSheet4U.com 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS RATINGS UNIT
VDSS
Drain to source voltage Vgs=0V
30 V
VGSS
Gate to source voltage Vds=0V
±10 V
Pch Channel dissipation Tc=25°C
3.1 W
Pin Input power
Zg=Zl=50Ω
10 mW
ID Drain current
- 200 mA
Tch Channel Temperature
-
150 °C
Tstg Storage temperature
- -40 to +125 °C
Rth j-c Thermal resistance
Junction to case
40
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=12.5V, Pin=4mW,
Drain efficiency
f=30MHz,Idq=50mA
Note : Above parameters , ratings , limits and conditions are subject to change.
LIMITS
MIN TYP MAX.
- - 25
- -1
123
0.3 0.7
-
55 65
-
UNIT
uA
uA
V
W
%
RD00HHS1
MITSUBISHI ELECTRIC
1/6
10 Jan 2006
1 page  
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
10 1.002 -3.6 12.533 178.3 0.003 90.3 0.920 -2.7
30 1.003 -9.9 12.631 174.6 0.008 82.8 0.919 -6.9
50 1.005 -16.8 12.784 170.6 0.013 79.5 0.918 -11.2
100
1.007
-33.5 12.820 159.1
0.025
67.4
0.898
-22.4
150
0.989
-49.8 12.355 147.5
0.035
56.5
0.866
-32.8
200
0.963
-64.0 11.571 136.8
0.042
47.5
0.824
-42.2
250
0.936
-76.9 10.697 127.3
0.048
38.2
0.781
-50.4
300
0.911
-87.9
9.791
119.1
0.053
30.6
0.745
-57.9
350
0.892
-97.7
8.972
111.4
0.055
24.6
0.711
-64.6
400
0.872 -106.2 8.202 104.9 0.057
18.5
0.685
-70.2
450
0.857 -113.7 7.533
98.9
0.058
13.1
0.665
-75.5
500 0.846 -120.1 6.921 93.4 0.058
8.7
0.649
-80.5
550 0.834 -126.0 6.386 88.4 0.059
4.7
0.640
-85.2
600 0.830 -131.0 5.894 83.7 0.058
0.2
0.630
-89.2
650
0.826 -135.9 5.484
79.3
0.057
-2.8
0.625
-93.3
700
0.821 -140.2 5.097
75.1
0.056
-6.9
0.623
-97.1
750 0.815 -144.0 4.749 71.0 0.055 -9.8 0.623 -100.7
800
0.812 -147.5 4.443
67.3
0.053
-13.0
0.623 -104.3
850
0.814 -151.0 4.167
63.8
0.051
-15.0
0.627 -107.7
900
0.816 -153.9 3.904
60.1
0.049
-17.6
0.630 -110.9
950
0.811 -156.8 3.670
56.8
0.048
-20.8
0.634 -113.9
1000
0.814 -159.5 3.471
53.7
0.046
-22.2
0.640 -117.1
RD00HHS1
MITSUBISHI ELECTRIC
5/6
10 Jan 2006
5 Page | ||
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| PDF Descargar | [ Datasheet RD00HHS1.PDF ] | |
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