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PDF CDBU0230-N Data sheet ( Hoja de datos )

Número de pieza CDBU0230-N
Descripción SMD Schottky Barrier Diode
Fabricantes Comchip Technology 
Logotipo Comchip Technology Logotipo



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No Preview Available ! CDBU0230-N Hoja de datos, Descripción, Manual

SMD Schottky Barrier Diode
CDBU0230-N(Lead-free Device)
Io = 200 mA
VR = 30 Volt s
Features
SMD Diodes Specialist
Designed for mounting on small surface.
Extremely thin/leadless package.
Low drop-down voltage.
Majority carrier conduction.
Mechanical data
0603(1608)
0.071(1.80)
0.063(1.60)
0.035(0.90)
0.029(0.75)
Case: 0603 (1608) Standard package ,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
Polarity: Indicated by cathode band
Mounting position: Any.
www.DataSheet4U.com Weight: 0.003 gram (approx.).
0.014(0.35) Typ.
0.033(0.85)
0.027(0.70)
0.012 (0.30) Typ.
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
35 V
VR 30 V
IO 200 mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
2000
mA
Power Dissipation
Storage temperature
Junction temperature
PD
TSTG
Tj
-40
150
+125
+125
mW
OC
OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Forward voltage
IF = 200 mADC
Reverse current
VR = 30 V
Capacitance between terminals f = 1 MH Z,and 10VDC reverse voltage
Symbol Min Typ Max Unit
VF 0.50 V
IR 30 uA
CT 9 PF
QW-A1050
REV:B
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