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Comchip Technology - (CDBUR42 / CDBUR43) SMD Schottky Barrier Diode

Numéro de référence CDBUR42
Description (CDBUR42 / CDBUR43) SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBUR42 fiche technique
SMD Schottky Barrier Diode
CDBUR42/43(RoHs Device)
SMD Diodes Specialist
Io = 200 mA
VR = 30 Volts
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
www.DataSheet4U.com Maximum Rating (at TA=25 OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 30 V
RMS reverse voltage
VR(RMS)
21 V
Average forward rectified current
IO 200 mA
Repetitive peak forward current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
Thermal resistance junction
to ambient air
Storage temperature
IFRM
IFSM
PD
R JA
TSTG
-55
0.5 A
4A
150 mW
667 OC/W
+125 OC
Junction temperature
Tj
Electrical Characteristics (at TA=25OC unless otherwise noted)
+125 OC
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
CDBUR42/43
CDBUR42
CDBUR42
CDBUR43
CDBUR43
IF = 200mA
IF = 10mA
IF = 50mA
IF = 2mA
IF = 15mA
VR = 25V
1
0.4
VF 0.65 V
0.33
0.45
IR 0.5 uA
Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage
CT
10 pF
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
Trr
5 nS
QW-A1082
REV:A
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