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Número de pieza | CDBUR54 | |
Descripción | SMD Schottky Barrier Diode | |
Fabricantes | Comchip Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CDBUR54 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! SMD Schottky Barrier Diode
CDBUR54(RoHs Device)
Io = 200 mA
VR = 30 Volts
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
SMD Diodes Specialist
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
www.DataSheet4U.com Maximum Rating (at TA=25 OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 30 V
RMS reverse voltage
VR(RMS)
21 V
Average forward rectified current
IO 200 mA
Repetitive peak forward current
Forward current,surge peak
Power dissipation
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFRM
IFSM
PD
0.3 A
0.6 A
150 mW
Storage temperature
TSTG
-65
+125 OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
VR = 25V
0.24
0.32
VF 0.4 V
0.5
1
IR 2 uA
Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage
CT
10 pF
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
Trr
5 nS
QW-A1084
REV:A
Page 1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet CDBUR54.PDF ] |
Número de pieza | Descripción | Fabricantes |
CDBUR54 | SMD Schottky Barrier Diode | Comchip Technology |
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