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CDSV20-G fiches techniques PDF

Comchip Technology - (CDSV19-G - CDSV21-G) SMD Switching Diode

Numéro de référence CDSV20-G
Description (CDSV19-G - CDSV21-G) SMD Switching Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDSV20-G fiche technique
SMD Switching Diode
CDSV19-G/20-G/21-G
RoHS Device
Features
-Fast switching speed.
-Small surface mount type, ideally suited for automatic
insertion.
-Low reverse current and low forward voltage.
-High reliability.
-For general purpose switching applications.
Mechanical data
Case: SOD-323, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.01 gram(approx.)
Marking: CDSV19-G:A8
CDSV20-G:T2
CDSV21-G:T3
COMCHIP
SMD Diodes Specialist
SOD-323
0.014(0.35)
0.010(0.25)
0.071(1.80)
0.063(1.60)
0.106(2.70)
0.098(2.50)
0.055(1.40)
0.047(1.20)
0.039(1.00)MAX.
0.004(0.10)MAX.
0.006(0.15)
0.003(0.08)
0.019(0.475)REF.
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 OC unless otherwise noted)
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Parameter
Symbol CDSV19-G CDSV20-G CDSV21-G
Repetitive peak reverse voltage
VRRM
120
200
250
Working peak reverse voltage
DC blocking voltage
VRWM
VR
100
150
200
RMS reverse voltage
VR(RMS)
71
106 141
Forward continuous current (Note 1)
IFM
400
Average rectified output current (Note 1)
IO
200
Non-repetitive peak forward surge current @t=1.0uS
@t=1.0S
IFSM
2.5
0.5
Repetitive peak forward surge current
IFRM
625
Power dissipation
PD 200
Thermal resistance junction to ambient air (Note 1)
RθJA
625
Operating and storage temperature range
TJ,TSTG
-65 ~ +150
Electrical Characteristics (at Ta=25 OC unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ.
Max
Unit
V
V
V
mA
mA
A
mA
mW
OC/W
OC
Unit
Forward voltage
Peak reverse current @Rated DC
blocking voltage
Junction capacitance
Reverse recovery time
VF IF=100mA
IF=200mA
IR TJ=25OC
TJ=100OC
CT VR=0V, f=1.0MHz
trr IF=IR=30mA,
Irr=0.1IR, RL=100Ω
-----
-----
1.0
1.25
V
-----
-----
100 nA
15 μA
----- ----- 5.0 pF
----- ----- 50 nS
QW-B0030
REV:A
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