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WT2310 fiches techniques PDF

Weitron Technology - N-Channel Enhancement Mode Power MOSFET

Numéro de référence WT2310
Description N-Channel Enhancement Mode Power MOSFET
Fabricant Weitron Technology 
Logo Weitron Technology 





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WT2310 fiche technique
N-Channel Enhancement
Mode Power MOSFET
3 DRAIN
1
GATE
Features:
2
SOURCE
*Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<90m@VGS=10V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
WT2310
DRAIN CURRENT
3 AMPERS
DRAIN SOUCE VOLTAGE
60 VOLTAGE
1
2
3
SOT-23
Maximum Ratingswww.DataSheet4U.com
(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 ,VGS@10V(TA
,VGS@10V(TA
Pulsed Drain Current1,2
VGS
ID
IDM
Total Power Dissipation(TA=25℃)
PD
Maximum Junction-ambient3
R JA
Operating Junction and Storage Temperature Range
TJ, Tstg
Value
60
±20
3.0
2.3
10
1.38
90
-55~+150
Unit
V
A
W
℃/W
Device Marking
WT2310=2310
WEITRON
http:www.weitron.com.tw
1/6
05-May-05

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