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ON Semiconductor - (MSA1162GT1 / MSA1162YT1) General Purpose Amplifier Transistors

Numéro de référence MSA1162YT1
Description (MSA1162GT1 / MSA1162YT1) General Purpose Amplifier Transistors
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MSA1162YT1 fiche technique
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MSA1162GT1, MSA1162YT1
General Purpose
Amplifier Transistors
PNP Surface Mount
Moisture Sensitivity Level: 1
ESD Rating: TBD
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
IC(P)
Value
60
50
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
PD
TJ
Tstg
Max
200
150
−55 to
+150
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
noted)
Characteristic
Symbol Min Max Unit
Collector−Emitter Breakdown Voltage (IC V(BR)CEO 50 − Vdc
= 2.0 mAdc, IB = 0)
Collector−Base Breakdown Voltage (IC = V(BR)CBO 60 − Vdc
10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage (IE =
10 mAdc, IC = 0)
V(BR)EBO 7.0 −
Vdc
Collector−Base Cutoff Current (VCB = 45
Vdc, IE = 0)
ICBO
− 0.1 mAdc
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
ICEO
− 0.1 mAdc
− 2.0 mAdc
− 1.0 mAdc
DC Current Gain (Note 1)
hFE
(VCE = 6.0 Vdc, IC = 2.0 mAdc) MSA1162
120 240
YT1 200 400
MSA1162GT1
Collector−Emitter Saturation Voltage (IC VCE(sat) − 0.5 Vdc
= 100 mAdc, IB = 10 mAdc)
Current −Gain − Bandwidth Product
(IC = 1 mA, VCE = 10.0 V, f = 10 MHz)
fT
MHz
80 −
1. Pulse Test: Pulse Width 300 ms, D.C. 2%.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAM
62x M
62 = Specific Device Code
x = G or Y
M = Date Code
ORDERING INFORMATION
Device {
Package
Shipping
MSA1162GT1
SC−59
3000/Tape & Reel
MSA1162YT1
SC−59
3000/Tape & Reel
†The “T1” suffix refers to a 7 inch reel.
© Semiconductor Components Industries, LLC, 2003
September, 2003 − Rev. 4
1
Publication Order Number:
MSA1162GT1/D

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