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Numéro de référence | D965 | ||
Description | TRANSISTOR | ||
Fabricant | Jiangsu Changjiang Electronics | ||
Logo | |||
1 Page
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
D965 TRANSISTOR NPN
TO 92
FEATURES
Power dissipation
PCM : 0.75 W Tamb=25
Collector current
ICM : 5
A
Collector-base voltage
V(BR)CBO : 42
V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
1.EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Ic=1 A IE=0
Ic= 1 mA IB=0
42
22
V
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE= 10 A IC=0
VCB= 30 V , IE=0
6
V
0.1 A
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
HFE 1
HFE 2
HFE 3
VCE(sat)
VEB= 6 V IC=0
VCE= 2 V, IC= 0.15
mA
VCE= 2V, IC = 500 mA
VCE= 2V, IC = 2000
mA
IC=3000mA,IB=100 mA
150
340
150
0.1 A
950
0.35 V
CLASSIFICATION OF HFE(2)
Rank
Range
R
340-600
T
560-950
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Pages | Pages 3 | ||
Télécharger | [ D965 ] |
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