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Numéro de référence | GA200SA60SP | ||
Description | INSULATED GATE BIPOLAR TRANSISTOR | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
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Bulletin I27235 07/06
INSULATEDGATEBIPOLARTRANSISTOR
GA200SA60SP
Standard Speed IGBT
Features
• Standard : Optimized for minimum saturation
voltage and low operating frequencies up to 1kHz
• Lowest conduction losses available
• Fully isolated package ( 2,500 volt AC)
• Very low internal inductance ( 5 nH typ.)
• Industry standard outline
• UL pending
• Totally Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 100A
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current c
Clamped Inductive Load Current d
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy e
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
SOT-227
Max.
600
200
100
400
400
± 20
155
2500
630
250
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
Thermal Resistance
RθJC
RθCS
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
www.irf.com
Typ.
–––
0.05
30
Max.
0.20
–––
–––
Units
V
A
V
mJ
V
W
°C
Units
°C/W
gm
1
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Pages | Pages 9 | ||
Télécharger | [ GA200SA60SP ] |
No | Description détaillée | Fabricant |
GA200SA60S | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
GA200SA60SP | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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