DY227 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Dc Components - TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

شماره قطعه	DY227
شرح مفصل	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
تولید کننده	Dc Components
آرم
1 Page No Preview Available ! www.DataSheet4U.com DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS DY227 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-92 Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 30 25 5 300 400 +150 -55 to +150 Unit V V V mA mW oC oC .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ .050 (1.27)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Collector-Base Breakdown Volatge BVCBO 30 Collector-Emitter Breakdown Voltage BVCEO 25 Emitter-Base Breakdown Volatge BVEBO 5 Collector Cutoff Current ICBO - Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) DC Current Gain(1) IEBO VCE(sat) hFE - - 70 (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Typ Max Unit Test Conditions - - V IC=100µA, IE=0 - - V IC=10mA, IB=0 - - V IE=10µA, IC=0 - 100 nA VCB=25V, IE=0 - 100 nA VEB=3V, IC=0 - 400 mV IC=300mA, IB=30mA - 400 - IC=50mA, VCE=1V Classification of hFE Rank O Y Range 70~140 120~240 G 200~400
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دیتاشیت توصیه

شماره قطعه	شرح مفصل	تولید کنندگان
DY227	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR	Dc Components

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